ty semiconductor reliability handbook (?handling SSM3J307T ? 1.5 v drive ? low on-resistance: r on = 83 m (max) (@v gs = -1.5 v) r on = 56 m (max) (@v gs = -1.8 v) r on = 40 m (max) (@v gs = -2.5 v) r on = 31 m (max) (@v gs = -4.5 v) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss -20 v gate-source voltage v gss 8 v dc i d (note 1) -5.0 drain current pulse i dp (note 1) -10 a p d (note 2) 700 drain power dissipation t = 10 s 1250 mw channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the precautions?/?derating conc ept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: the junction temperature should not exceed 150 c during use. note 2: mounted on an fr4 board. (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) marking equivalent circuit (top view) unit: mm 0.15 00.1 0.160.05 0.70.05 2.90.2 0.950.95 1.6-0.1 +0.2 2.8-0.3 +0.2 1.90.2 0.40.1 weight: 10 mg (typ.) 1: gate 2: source 3: drain 1 2 3 kdp 1 2 3 tsm smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta = 25c) characteristic symbol test conditions min typ. max unit v (br) dss i d = -1 ma, v gs = 0 v -20 ? ? drain-source breakdown voltage v (br) dsx i d = -1 ma, v gs = + 8 v -12 ? ? v drain cut-off current i dss v ds = -20v, v gs = 0 v ? ? -10 a gate leakage current i gss v gs = 8 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = -3 v, i d = -1 ma -0.3 ? -1.0 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -4.0 a (note 3) 9.8 ? ? s i d = -4.0 a, v gs = -4.5 v (note 3) ? 25 31 i d = -4.0 a, v gs = -2.5 v (note 3) ? 31 40 i d = -1.5 a, v gs = -1.8 v (note 3) ? 38 56 drain?source on-resistance r ds (on) i d = -0.75 a, v gs = -1.5 v (note 3) ? 46 83 m input capacitance c iss ? 1170 ? output capacitance c oss ? 250 ? reverse transfer capacitance c rss v ds = -10 v, v gs = 0 v, f = 1 mhz ? 200 ? pf total gate charge q g ? 19 ? gate-source charge q gs ? 14.2 ? gate-drain charge q gd v ds = ? 10 v, i d = ? 5.0 a v gs = ? 4.5 v ? 4.8 ? nc turn-on time t on ? 35 ? switching time turn-off time t off v dd = -10 v, i d = -2.0 a, v gs = 0 to -2.5 v, r g = 4.7 ? 160 ? ns drain-source forward voltage v dsf i d = 5.0 a, v gs = 0 v (note 3) ? 0.83 1.2 v note 3: pulse test switching time test circuit (a) test circuit (b) v in usage considerations let v th be the voltage applied between gate and sour ce that causes the drain current (i d ) to below ? 1 ma for the SSM3J307T. then, for normal switching operation, v gs(on) must be higher than v th, and v gs(off) must be lower than v th. this relationship can be expressed as: v gs(off) < v th < v gs(on). take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. (c) v out v dd = ? 10 v r g = 4.7 d.u. 1% v in : t r , t f < 5 ns common source ta = 25c 0 ? 2.5v 10 s in v dd out r g r l t on 90% 10% ? 2.5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd SSM3J307T smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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